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35% magnetocurrent with spin transport through Si Biqin Huanga
 

Summary: 35% magnetocurrent with spin transport through Si
Biqin Huanga
and Lai Zhao
Electrical and Computer Engineering Department, University of Delaware, Newark, Delaware 19716
Douwe J. Monsma
Cambridge NanoTech, Inc., Cambridge, Massachusetts 02139
Ian Appelbaumb
Electrical and Computer Engineering Department, University of Delaware, Newark, Delaware 19716
Received 1 May 2007; accepted 7 July 2007; published online 30 July 2007
Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the
formation of a silicide at the ferromagnetic metal FM /silicon interface. In the present work, this
"magnetically dead" silicide where strong spin scattering significantly reduces injected spin
polarization is eliminated by moving the FM in the spin injector from the tunnel junction base
anode to the emitter cathode and away from the silicon surface. This results in over an
order-of-magnitude increase in spin injection efficiency, from a previously reported magnetocurrent
ratio of 2% to 35% and an estimated spin polarization in Si from 1% to at least 15%. The
injector tunnel junction bias dependence of this spin transport signal is also measured,
demonstrating the importance of low bias voltage to preserve high injected spin polarization.
2007 American Institute of Physics. DOI: 10.1063/1.2767198
Spin injection, manipulation, and detection in semicon-

  

Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park

 

Collections: Engineering; Materials Science