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Vertical design of cubic GaN-based high electron mobility transistors R. Granzner,1,a)
 

Summary: Vertical design of cubic GaN-based high electron mobility transistors
R. Granzner,1,a)
E. Tschumak,2
M. Kittler,1
K. Tonisch,1
W. Jatal,1
J. Pezoldt,1
D. As,2
and
F. Schwierz,1,a)
1
Technische Universita®t Ilmenau, Institut fu®r Mikro- und Nanotechnologien, PF 100565, 98684 Ilmenau,
Germany
2
Universita®t Paderborn, Department Physik, Warburger Str. 100, 33098 Paderborn, Germany
(Received 28 June 2011; accepted 24 October 2011; published online 1 December 2011)
Cubic (zinc blende) AlGaN=GaN heterostructures for application in GaN-based high electron
mobility transistors are investigated theoretically. The formation of 2DEGs (two-dimensional
electron gas) in cubic AlGaN=GaN structures is studied, carrier distributions and threshold voltages
are calculated, and design issues are investigated. For the calculations, a Schro®dinger-Poisson solver

  

Source: As, Donat Josef - Department Physik, Universitšt Paderborn

 

Collections: Materials Science; Physics