Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Current inhomogeneity effect in single-layer ferromagnetic antirectangular structures
 

Summary: Current inhomogeneity effect in single-layer ferromagnetic
antirectangular structures
C. C. Wang, A. O. Adeyeye,a)
Y. H. Wu, and M. B. A. Jalil
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering,
National University of Singapore, 4 Engineering Drive 3, Singapore 117576
(Received 1 July 2004; accepted 12 October 2004; published online 27 December 2004)
The magnetotransport properties of antirectangular arrays 2 10 m2
embedded into 200--thick
continuous Ni80Fe20 films with the interhole spacing equal to 2 m have been investigated. We
observed that the inhomogeneous current-density distribution, due to the placement of electrical
contacts, caused an unusual positive magnetoresistance (MR) behavior for the in-plane longitudinal
measurements. Finite element simulations on current-density distribution are in agreement with
experimental data on small area antirectangular structures. For the continuous film, however, the
current-density distribution does not play a significant role in determining the shape of the MR
curve. 2005 American Institute of Physics. [DOI: 10.1063/1.1828608]
I. INTRODUCTION
With the advancement of lithography, a number of arti-
ficially engineered ferromagnetic mesoscopic and nanostruc-
tures have been designed to explore fresh applications and

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science