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Self-consistent modeling of accumulation layers and tunneling currents through very thin oxides
 

Summary: Self-consistent modeling of accumulation layers and tunneling currents
through very thin oxides
Farhan Rana, Sandip Tiwari,a)
and D. A. Buchanan
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Received 22 April 1996; accepted for publication 7 June 1996
Poisson and Schro¨dinger equations are solved self-consistently for accumulated layers in
metal-oxide-semiconductor devices and applied to the calculation of tunneling currents at 300 K and
77 K and extraction of parameters for very thin oxides. Calculations at 300 K show strong
agreement with measured tunneling currents and also point out the sources of inaccuracies in
extracting thicknesses of oxides by electrical methods such as through measurement of capacitance.
Direct tunneling current in thin oxides 1.5­2.0 nm are shown to achieve larger than 1 A /cm2
current density for applied voltages smaller than 3 V, pointing to possibilities of achieving high
endurance injection across thin oxides. Comparison of calculations using a classical approach and
self-consistent approach shows fortuitous agreements in tunneling currents despite large differences
in the physical models. Appropriate methods for calculating tunneling currents from bound and
extended quantum states are also described. © 1996 American Institute of Physics.
S0003-6951 96 00834-0
An accurate description of metal-oxide-semiconductor
devices requires careful modeling of inversion and accumu-

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering