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IOP PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 21 (2009) 224010 (8pp) doi:10.1088/0953-8984/21/22/224010
 

Summary: IOP PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER
J. Phys.: Condens. Matter 21 (2009) 224010 (8pp) doi:10.1088/0953-8984/21/22/224010
Linear stability and instability patterns in
ion-sputtered silicon
Charbel S Madi, H Bola George and Michael J Aziz
Harvard School of Engineering and Applied Sciences, Cambridge, MA 02138, USA
Received 24 February 2009
Published 12 May 2009
Online at stacks.iop.org/JPhysCM/21/224010
Abstract
We study the patterns formed on Ar+
ion-sputtered Si surfaces at room temperature as a
function of the control parameters ion energy and incidence angle. We observe the sensitivity of
pattern formation to artifacts such as surface contamination and report the procedures we
developed to control them. We identify regions in control parameter space where holes, parallel
mode ripples and perpendicular mode ripples form, and identify a region where the flat surface
is stable. In the vicinity of the boundaries between the stable and pattern-forming regions,
called bifurcations, we follow the time dependence from exponential amplification to saturation
and examine the amplification rate and the wavelength in the exponential amplification regime.
The resulting power laws are consistent with the theory of nonequilibrium pattern formation for

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science