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Effect of contact geometry on the magnetoresistance response of Ni80Fe20 antidot array
 

Summary: Effect of contact geometry on the magnetoresistance response of Ni80Fe20
antidot array
C. C. Wang, A. O. Adeyeye,a
and Y. H. Wu
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National
University of Singapore, 4 Engineering Drive 3, Singapore 117576
Presented on 9 November 2004; published online 13 May 2005
The effect of electrical contact geometry on the shape and sign of the magnetoresistance MR
response in micron-size antirectangular array structures has been investigated. The MR response is
strongly sensitive to the direction of the applied sense current. The results can be attributed to the
competing anisotropic MR effects from two inhomogeneous orthogonal current flows in the
structure. We have also investigated the effect of film thickness on the overall MR responses, and
observed that as film thickness decreases, the switching field and MR ratio decrease accordingly and
the competition between the anisotropic MR effects becomes more evident. 2005 American
Institute of Physics. DOI: 10.1063/1.1853751
I. INTRODUCTION
Advances in lithography and other controlled fabrication
techniques have enabled researchers to design a wide variety
of magnetic mesostructures to explore novel phenomena and
potential applications. It is well established that magne-

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science