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Shape stability of TiSi2 islands on Si ,,111... W.-C. Yang, H. Ade, and R. J. Nemanicha)

Summary: Shape stability of TiSi2 islands on Si ,,111...
W.-C. Yang, H. Ade, and R. J. Nemanicha)
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
Received 26 September 2003; accepted 3 November 2003
The evolution of the shape and size of TiSi2 islands on Si 111 surfaces is explored with real time
ultraviolet photoelectron emission microscopy. During continuous deposition of Ti at elevated
temperatures, individual islands in a dilute surface distribution grow larger without island­island
interactions. As they increase in size, symmetric islands transform into elongated shaped islands
with high length-to-width aspect ratios. An extremely elongated island shows a ratio of 85:1 and is
17 m long and 0.2 m wide. The individual elongated islands have different widths regardless
of their length. The width of the growing islands is determined at the initial transition stage and
remains essentially constant with increasing length. We propose that the various widths of the
elongated islands are determined by the degree of strain relaxation, possibly through the nucleation
of dislocations at the island interface. In addition, it is found that the elongated islands display a
prism-like shape or a truncated prism-like shape. We propose that the shape evolution of the
elongated islands is related to both strain relaxation and growth kinetics. © 2004 American
Institute of Physics. DOI: 10.1063/1.1636526
The spontaneous formation of three-dimensional 3D is-
lands is a common growth mode in heteroepitaxial film


Source: Ade, Harald W.- Department of Physics, North Carolina State University


Collections: Physics