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Sensors and Actuators A 135 (2007) 3442 A high-performance silicon-on-insulator MEMS gyroscope
 

Summary: Sensors and Actuators A 135 (2007) 3442
A high-performance silicon-on-insulator MEMS gyroscope
operating at atmospheric pressure
Said Emre Alper, Kivanc Azgin, Tayfun Akin
Middle East Technical University, Department of Electrical and Electronics Eng., Ankara, Turkey
Received 28 February 2006; received in revised form 9 June 2006; accepted 13 June 2006
Available online 27 July 2006
Abstract
This paper presents a new, high-performance silicon-on-insulator (SOI) MEMS gyroscope with decoupled oscillation modes. The gyroscope
structure allows it to achieve matched-resonance-frequencies, large drive-mode oscillation amplitude, high sense-mode quality factor, and low
mechanical cross-talk. The gyroscope is fabricated through the commercially available SOIMUMPS process of MEMSCAP Inc. The fabricated
gyroscope has minimum capacitive sense gaps of 2.6 m and a structural silicon thickness of 25 m, and it fits into a chip area smaller than
3 mm 3 mm. The fabricated gyroscope is hybrid connected to a CMOS capacitive interface ASIC chip, which is fabricated in a standard 0.6 m
CMOS process. The characterization of the hybrid-connected gyroscope demonstrates a low measured noise-equivalent rate of 90
/h/Hz1/2
at
atmospheric pressure, eliminating the need for a vacuum package for a number of applications. R2
-non-linearity of the gyroscope is measured to
be better than 0.02%. The gyroscope has a low quadrature signal of 70
/s and a short-term bias stability of 1.5

  

Source: Akin, Tayfun - Department of Electrical and Electronics Engineering, Middle East Technical University

 

Collections: Engineering