Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
The HARPSS process for fabrication of precision MEMS inertial sensors
 

Summary: The HARPSS process for fabrication of precision
MEMS inertial sensors
Farrokh Ayazi *
School of Electrical and Computer Engineering, Georgia Institute of Technology,
Atlanta, GA 30332-0250, USA
Abstract
The high aspect-ratio combined poly- and single-crystal silicon micromachining technology
(HARPSS) and its application to fabrication of precision MEMS inertial sensors are pre-
sented. HARPSS is a single wafer, all silicon, front-side release process which is capable of
producing 10100's of microns thick, electrically isolated, 3-D poly- and single-crystalline
silicon microstructures with various size air-gaps ranging from sub-micron to tens of microns.
High aspect-ratio (>50:1) polysilicon structures are created by refilling 100's of microns deep
trenches with polysilicon deposited over a sacrificial oxide layer. This technology provides
features required for precision micromachined inertial sensors. The all-silicon feature of this
technology improves long term stability and temperature sensitivity while fabrication of large
area, vertical electrodes with sub-micron gap spacing will increase the sensitivity by orders of
magnitude.
2002 Published by Elsevier Science Ltd.
Keywords: Silicon micromachining; MEMS; Polysilicon micromachining; Deep reactive ion etching;
Inertial sensors; Gyroscope

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering