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Effect of strain on tunability in Ba0.60Sr0.40TiO3 thin films on PtSi substrates

Summary: Effect of strain on tunability in Ba0.60Sr0.40TiO3 thin films
on PtSi substrates
D. M. Potrepkaa
Sensors & Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, Maryland 20783
S. Hirsch, M. W. Cole, and W. D. Nothwang
Weapons & Materials Research Directorate, Active Materials Research Group,
U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005
S. Zhong and S. P. Alpay
Department of Materials Science and Engineering and Institute of Materials Science,
University of Connecticut, Storrs, Connecticut 06269
Received 16 March 2005; accepted 30 November 2005; published online 13 January 2006
Ba0.6Sr0.4TiO3 films with a thickness of 200 nm were deposited on PtSi substrates at 400 and
700 C. Room-temperature tunability was measured and found to improve with deposition
temperature, but losses also increased. The dielectric constant, tunability, and loss tangent are found
to be 350, 52%, and 0.07 at 300 kV/cm for the 700 C deposition. The film grown at 700 C has
a larger grain size, leading to approximately 5% higher tunability compared to the film deposited at
400 C. Supporting theoretical calculations were carried out using a modified Landau-Devonshire
thermodynamic formalism that takes into account the internal stresses that arise from the differences
of coefficients of thermal expansion between the film and the substrate. 2006 American Institute
of Physics. DOI: 10.1063/1.2159557


Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut


Collections: Materials Science