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Defect and Diffusion Forum 143-147, 1041 (1997) Page 1 Effect of Pressure on Arsenic Diffusion in Germanium: Evidence Against
 

Summary: Defect and Diffusion Forum 143-147, 1041 (1997) Page 1
Effect of Pressure on Arsenic Diffusion in Germanium: Evidence Against
Simple Vacancy Mechanism
Salman Mitha1a)
Michael J. Aziz1, David Schiferl2 and David B. Poker3
1Division of Applied Sciences, Harvard University, Cambridge MA 02138 USA
2Los Alamos National Laboratory, Los Alamos NM 87545 USA
3Solid State Division, Oak Ridge National Laboratory, Oak Ridge TN 37831 USA
Keywords: Semiconductor, activation volume, pressure, mechanism, vacancy, interstitialcy
We have measured the effect of pressure on As diffusion in Ge. Diffusion anneals on ion-
implanted samples were carried out in a high temperature diamond anvil cell using fluid argon as a
clean, hydrostatic pressure medium. At 575 o
C over the pressure range 0.1 to 4 GPa, pressure
slightly enhances the diffusivity, characterized by an activation volume of -1.71.4 cm3/mole or -
0.120.10 times the atomic volume of Ge. The results call into question the prevailing view that
diffusion of group III, IV and V elements is mediated entirely by vacancies. Potential explanations
of these results are discussed.
Because understanding and controlling diffusion related phenomena become increasingly important
as semiconductor device dimensions decrease, diffusion in semiconductors has been heavily studied.
Despite this emphasis there remains no consensus about the relative roles of the various proposed

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science