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Microscopy of Semiconducting Materials 2003: Proceedings of the 13th International Conference on Microscopy of Semiconducting Materials, Cambridge University, 31 March-3 April 2003,ed. A. G.
 

Summary: Microscopy of Semiconducting Materials 2003: Proceedings of the 13th International Conference on
Microscopy of Semiconducting Materials, Cambridge University, 31 March- 3 April 2003,ed. A. G.
Cullis and P. A. Midgley, Institute of Physics and IOP Publishing Limited (in press).
Formationof self-organized nanostructures on Ge during focused
ion beam sputtering
W Zhoua
, A Cuenat b
and M J Aziz
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
a
Current address: School of Mechanical and Production Engineering, Nanyang Technological
University, 50 Nanyang Avenue, Singapore 639798 E-mail: WZhou@Cantab.Net
b
Current address: CRMC2-CNRS, Campus de Luminy, F-13288 Marseille Cedex 9, France
ABSTRACT: We report the formation and self-organization of nanoscale structures during
normal-incidence focused ion beam sputtering of Ge. Ridge-shaped ripples with large height-
to-width ratios form. We provide evidence that the ripples form spontaneously from
nanostructured networks at doses below 10
17
ionscm

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science