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Reversal mechanisms in alternating width nanowires S. Goolaup,1
 

Summary: Reversal mechanisms in alternating width nanowires
S. Goolaup,1
A. O. Adeyeye,1,a
N. Singh,1,2
and G. Gubbiotti3
1
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National
University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore
2
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685,
Singapore
3
CNISM, Dipartimento di Fisica, UniversitÓ di Perugia, Via A. Pascoli, I-06123 Perugia, Italy
Presented on 7 November 2007; received 6 September 2007; accepted 16 November 2007;
published online 13 March 2008
The magnetization reversal mechanism in closely packed alternating width nanowires consisting of
two sets of Ni80Fe20 nanowires of different widths w1=330 nm and w2=580 nm, alternated in an
array is presented. For all the wire thicknesses studied, the reversal mechanism of the alternating
width wire array is markedly different from the homogeneous width wire array. The magnetization
reversal mechanism of the alternating width nanowires is due to the distinct switching fields of the

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science