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NEST Scientific Report 2007-2009 Low-dimensional In-based semiconductor systems
 

Summary: NEST Scientific Report 2007-2009
Low-dimensional In-based semiconductor systems
41
R
ecent advances in the epitaxial growth of low-dimensional semiconductor systems
with techniques such as molecular beam epitaxy (MBE) make it possible to form
structures of various geometries. The composition profile and the vertical transport
properties of self-assembled InAs/GaAs quantum dots (QDs) and quantum rings (QRs)
are investigated by X-ray photoemission electron microscopy and conductive atomic force
microscopy [1-3]. The resulting measurements give information on the mechanisms driving
the formation of such low-dimensional structures. Furthermore, we have investigated the
transport properties of two dimensional electron gases (2DEGs) in In0.75Ga0.25As quantum
wells and found a correlation between the local indium concentration modulation, measured
with X-ray photoemission electron microscopy, and the pronounced anisotropy observed
in the low-temperature mobility of the 2DEG [4-5].
The self-organization of nanostructures
represents a phenomenon of fundamental
interest in material science, with great
potential in various fields of technology.
However, size, shape, and compositional

  

Source: Abbondandolo, Alberto - Scuola Normale Superiore of Pisa

 

Collections: Mathematics