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Cubic group-III nitride-based nanostructures--basics and applications in optoelectronics

Summary: Cubic group-III nitride-based nanostructures--basics
and applications in optoelectronics
D.J. As
Department of Physics, University of Paderborn, Warburger Strasse 100, 33098 Paderborn, Germany
a r t i c l e i n f o
Available online 12 September 2008
Cubic group-III nitrides
Intersubband absorption
Cubic HFETs
a b s t r a c t
Molecular beam epitaxy (MBE) of cubic group-III nitrides is a direct way to eliminate the polarization
effects which inherently limits the performance of optoelectronic devices containing quantum well or
quantum dot active regions. In this contribution the latest achievement in the MBE of phase-pure cubic
GaN, AlN, InN and their alloys will be reviewed. A new reflected high-energy electron beam (RHEED)
control technique enables to carefully adjust stoichiometry and to severely reduce the surface
roughness, which is important for any hetero-interface. The structural, optical and electrical properties
of cubic nitrides and AlGaN/GaN will be presented. We show that no polarization field exists in cubic
nitrides and demonstrate 1.55 mm intersubband absorption in cubic AlN/GaN superlattices. Further the


Source: As, Donat Josef - Department Physik, Universitšt Paderborn


Collections: Materials Science; Physics