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Misfit dislocations in nanoscale ferroelectric heterostructures V. Nagarajan, C. L. Jia, H. Kohlstedt, and R. Waser
 

Summary: Misfit dislocations in nanoscale ferroelectric heterostructures
V. Nagarajan, C. L. Jia, H. Kohlstedt, and R. Waser
Institut für Festkörperforschung (IFF), Forschungzentrum Jülich D 52425, Germany
I. B. Misirlioglu and S. P. Alpaya
Department of Materials Science and Engineering, Institute of Materials Science,
University of Connecticut, Storrs, Connecticut 06269
R. Ramesh
Department of Materials Science and Engineering and Department of Physics, University of California,
Berkeley, California 94720
Received 8 February 2005; accepted 17 March 2005; published online 6 May 2005
We present a quantitative study of the thickness dependence of the polarization and piezoelectric
properties in epitaxial 001 PbZr0.52Ti0.48O3 films grown on 001 SrRuO3-buffered 001 SrTiO3
substrates. High-resolution transmission electron microscopy reveals that even the thinnest films
8 nm are fully relaxed with a dislocation density close to 1012
cm-2
and a spacing of
approximately 12 nm. Quantitative piezoelectric and ferroelectric measurements show a drastic
degradation in the out-of-plane piezoelectric constant d33 and the switched polarization P as a
function of decreasing thickness. In contrast, lattice-matched ultrathin PbZr0.2Ti0.8O3 films that have
a very low dislocation density show superior ferroelectric properties. Supporting theoretical

  

Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut

 

Collections: Materials Science