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Saturation of the Anomalous Hall Effect in Critically Disordered Ultrathin CNi3 Films Y. M. Xiong and P. W. Adams
 

Summary: Saturation of the Anomalous Hall Effect in Critically Disordered Ultrathin CNi3 Films
Y. M. Xiong and P. W. Adams
Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803-4001, USA
G. Catelani
Department of Physics, Yale University, 217 Prospect Street, New Haven, Connecticut 06520, USA
(Received 9 November 2009; published 19 February 2010)
We demonstrate that a distinct high-disorder anomalous Hall effect phase emerges at the correlated
insulator threshold of ultrathin, amorphous, ferromagnetic CNi3 films. In the weak-localization regime,
where the sheet conductance G ) e2
=h, the anomalous Hall resistance of the films increases with
increasing disorder and the Hall conductance scales as Gxy / G' with ' ¼ 1:6. However, at sufficiently
high disorder the system begins to enter the 2D correlated insulator regime, at which point the Hall
resistance Rxy abruptly saturates and the scaling exponent becomes ' ¼ 2. Tunneling measurements show
that the saturation behavior is commensurate with the emergence of the 2D Coulomb gap, suggesting that
e-e interactions mediate the high-disorder phase.
DOI: 10.1103/PhysRevLett.104.076806 PACS numbers: 73.50.Jt, 73.20.Fz, 75.47.Àm
One of the most far-reaching goals in condensed matter
physics is to develop a comprehensive understanding of
how electron-electron (e-e) interactions, and their atten-
dant correlations, affect the electronic properties of two-

  

Source: Adams, Philip W. - Department of Physics and Astronomy, Louisiana State University

 

Collections: Materials Science