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LOW TEMPERATURE QUALITY FACTOR SCALING OF GHz FREQUENCY SILICON RESONATORS
 

Summary: (b)
LOW TEMPERATURE QUALITY FACTOR SCALING OF GHz FREQUENCY
SILICON RESONATORS
Eugene Hwang*
and Sunil A. Bhave
OxideMEMS Lab, Cornell University, Ithaca, NY, USA
Actuation
junction
Sensing
junction
(a)
oxide
ABSTRACT
In this paper, we demonstrate quality factor (Q) enhancement
of a silicon RF MEMS resonator by cryogenic cooling from room
temperature down to liquid nitrogen temperatures (78K). The
resulting Q is approximately 63,000 at a frequency of 3.72 GHz,
yielding an f-Q product of 2.341014
Hz. This work verifies that the
resonator is operating in the Landau-Rumer regime at room

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering