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08853010/$25.00 2008 IEEE 2596 IEEE TransacTIons on UlTrasonIcs, FErroElEcTrIcs, and FrEqUEncy conTrol, vol. 55, no. 12, dEcEmbEr 2008
 

Summary: 08853010/$25.00 2008 IEEE
2596 IEEE TransacTIons on UlTrasonIcs, FErroElEcTrIcs, and FrEqUEncy conTrol, vol. 55, no. 12, dEcEmbEr 2008
Abstract--This paper studies the application of lateral bulk
acoustic thin-film piezoelectric-on-substrate (TPoS) resona-
tors in high-frequency reference oscillators. Low-motional-
impedance TPoS resonators are designed and fabricated in 2
classes--high-order and coupled-array. Devices of each class
are used to assemble reference oscillators and the performance
characteristics of the oscillators are measured and discussed.
Since the motional impedance of these devices is small, the
transimpedance amplifier (TIA) in the oscillator loop can be
reduced to a single transistor and 3 resistors, a format that is
very power-efficient. The lowest reported power consumption
is ~350 W for an oscillator operating at ~106 MHz. A pas-
sive temperature compensation method is also utilized by in-
cluding the buried oxide layer of the silicon-on-insulator (SOI)
substrate in the structural resonant body of the device, and a
very small (-2.4 ppm/C) temperature coefficient of frequency
is obtained for an 82-MHz oscillator.
I. Introduction

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering