Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics
 

Summary: © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
p s scurrent topics in solid state physics
c
status
solidi
www.pss-c.com
physica
Early View publication on wileyonlinelibrary.com
(issue and page numbers not yet assigned;
citable using Digital Object Identifier ­ DOI)
Phys. Status Solidi C, 1­4 (2012) / DOI 10.1002/pssc.201100190
Electrical properties of MBE grown
Si3N4­cubic GaN MIS structures
A. Zado*
, K. Lischka, and D. J. As
University of Paderborn, Faculty of Science, Department of Physics, Warburger Str. 100, 33098 Paderborn, Germany
Received 26 May 2011, revised 27 September 2011, accepted 16 November 2011
Published online 15 February 2012
Keywords defects, interfaces, molecular beam epitaxy, semiconducting III-V materials
*

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics