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Phys. Status Solidi C, 1­4 (2012) / DOI 10.1002/pssc.201100190
Electrical properties of MBE grown
Si3N4­cubic GaN MIS structures
A. Zado*
, K. Lischka, and D. J. As
University of Paderborn, Faculty of Science, Department of Physics, Warburger Str. 100, 33098 Paderborn, Germany
Received 26 May 2011, revised 27 September 2011, accepted 16 November 2011
Published online 15 February 2012
Keywords defects, interfaces, molecular beam epitaxy, semiconducting III-V materials
*

Source: As, Donat Josef - Department Physik, Universität Paderborn

Collections: Materials Science; Physics