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Summary: Enhanced nitrogen incorporation by pulsed laser annealing
of GaNxAs1Àx formed by N ion implantation
K. M. Yu,a)
W. Walukiewicz, and J. W. Beeman
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
M. A. Scarpulla and O. D. Dubon
Materials Sciences Division, Lawrence Berkeley National Laboratory and Department of Materials Science
and Mineral Engineering, University of California, Berkeley, California 94720
M. R. Pillai and M. J. Aziz
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
Received 17 January 2002; accepted for publication 28 March 2002
We demonstrate that pulsed laser annealing followed by rapid thermal annealing greatly enhances
incorporation of substitutional N in N -implanted GaAs. Films implanted to 1.8% N exhibit a
fundamental band gap of 1.26 eV a band gap reduction of 160 meV , corresponding to an N
activation efficiency of 50%. The optical and crystalline quality of the synthesized film is
comparable to GaNxAs1 x thin films of similar composition grown by epitaxial growth techniques.
Compared to films produced by N implantation and rapid thermal annealing only, the introduction
of pulsed laser annealing improves N incorporation by a factor of 5. Moreover, we find that the
synthesized films are thermally stable up to an annealing temperature of 950 °C. © 2002 American
Institute of Physics. DOI: 10.1063/1.1481196
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