Summary: Strain induced change of bandgap and effective mass in silicon nanowires
Daryoush Shiri, Yifan Kong, Andrei Buin, and M. P. Anantram
Nanotechnology Program, Department of Electrical and Computer Engineering, University of Waterloo, 200
University Ave. W, Waterloo, Ontario N2L 3G1, Canada
Received 25 April 2008; accepted 26 July 2008; published online 22 August 2008
This work computationally investigates the electromechanical properties of hydrogen passivated
silicon nanowires under uniaxial tensile strain. It has been observed that bandgap changes can be as
large as 60 and 100 meV per 1% axial strain for 100 and 110 nanowires, respectively. This rate
of change in the bandgap is independent of nanowire size and depends only on the growth direction.
More importantly, the nature of the bandgap can reversibly change from indirect to direct as a
function of strain. It is also observed that for larger diameter nanowires, the indirect-to-direct
transition occurs at smaller compressive strain. © 2008 American Institute of Physics.
Silicon nanowire SiNW growth with hydrogen passi-
vation has been demonstrated1,2
studies of electronic, op-
tical, and mechanical properties have been performed.