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Summary: Pull-in/out analysis of nano/microelectromechanical switches
with defective oxide layers
Yang Xu and N. R. Alurua
Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign,
Urbana, Illinois 61801, USA
Received 17 April 2009; accepted 28 July 2009; published online 21 August 2009
We investigate the effect of surface and interior defects such as vacancies and broken bonds on the
performance of nano/microelectromechanical N/MEMS switches. By combining multiscale
electrostatic analysis with mechanical analysis, we compute the capacitance-voltage and pull-in/out
voltages of N/MEMS switches in the presence of defects in the dielectric oxide layer. Our results
indicate that both surface and interior defects can change the pull-in/out voltages leading to
significant voltage offsets. These voltage offsets can lead to an eventual failure of the N/MEMS
switch. © 2009 American Institute of Physics. DOI: 10.1063/1.3211111
One of the popular applications of nano/microelectro-
mechanical systems N/MEMS is rf switches, which are re-
quired to operate at high frequencies for millions of cycles.1
During each cycle of operation, the moving electrode makes
a mechanical contact with the thin dielectric e.g., the oxide
layer and this can generate defects on the surface and inside
the dielectric. The presence of these defects can lead to
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