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Spin Polarized Electron Transport near the Si=SiO2 Interface Hyuk-Jae Jang and Ian Appelbaum*
 

Summary: Spin Polarized Electron Transport near the Si=SiO2 Interface
Hyuk-Jae Jang and Ian Appelbaum*
Center for Nanophysics and Advanced Materials and Department of Physics, University of Maryland,
College Park, Maryland 20742 USA
(Received 12 June 2009; published 11 September 2009)
Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is
studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a
perpendicular magnetic field at 60 K. As electrons are attracted to the interface by an electrostatic gate, we
observe shorter average spin transit times and an increase in spin coherence, despite a reduction in total
spin polarization. This behavior, which is in contrast with the expected exponential depolarization seen in
bulk transport devices, is explained using a transform method to recover the empirical spin current transit-
time distribution and a simple two-stage drift-diffusion model. We identify strong interface-induced spin
depolarization (reducing the spin lifetime by over 2 orders of magnitude from its bulk transport value) as
the consistent cause of these phenomena.
DOI: 10.1103/PhysRevLett.103.117202 PACS numbers: 85.75.Ąd, 72.25.Dc, 72.25.Hg, 85.30.Tv
Recent advances in the development of techniques for
electrical injection and detection of spin-polarized elec-
trons have revolutionized semiconductor spintronics [1].
Among the materials studied so far, silicon (Si) stands out
due to its weak spin orbit and hyperfine effects [2,3],

  

Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park

 

Collections: Engineering; Materials Science