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Magnetization reversal in exchange biased antidot arrays D. Tripathya

Summary: Magnetization reversal in exchange biased antidot arrays
D. Tripathya
and A. O. Adeyeye
Department of Electrical and Computer Engineering, Information Storage Materials Laboratory, National
University of Singapore, Singapore 117576, Singapore
Presented 13 November 2008; received 29 August 2008; accepted 16 October 2008;
published online 2 February 2009
A systematic study of the exchange bias effects in arrays of Cu 10 nm /NiFe 30 nm /IrMn
tIrMn /Cu 2 nm nanoscale antidot arrays prepared by deep ultraviolet lithography is presented.
The magnetic properties of the antidot arrays are compared to that of a continuous film of identical
composition. We observed that the antidots demonstrate higher coercivity and exchange bias fields.
This enhancement in the exchange bias field, and the relative evolution of exchange bias field with
the IrMn layer thickness tIrMn for both the antidot array and the continuous film, is attributed to the
physical limitations imposed on the IrMn domain size by the reduced lateral dimensions of the
antidots. Magnetoresistance measurements further corroborate the results obtained from the
hysteresis loops. 2009 American Institute of Physics. DOI: 10.1063/1.3056400
Exchange bias EB refers to the occurrence of a unidi-
rectional shift in the hysteresis loop HE along the magnetic
field axis in exchange coupled ferromagnetic/
antiferromagnetic FM/AFM systems.1


Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore


Collections: Physics; Materials Science