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SPICE BSIM3 Model Parameters Extraction and Optimization for Low Temperature Application
 

Summary: SPICE BSIM3 Model Parameters Extraction and Optimization for Low
Temperature Application
H. Abebe, V. Tyree and N. S. Cockerham
USC Viterbi School of Engineering, Information Sciences Institute, MOSIS service,
Marina del Rey, CA 90292, USA. Tel: (310) 448-8740, Fax: (310) 823-5624,
e-mail: abebeh@mosis.com, tyree@mosis.com and nankyung@mosis.com
ABSTRACT
The SPICE BSIM3v3.1 model parameters extraction and
optimization strategy that we present here is applicable for
a half micron technology and circuits operating at
temperature ranging from -191 to 1250
C. The room
temperature extraction and optimization strategy [1] is used
as basis to extract the temperature dependent BSIM3v3.1
model parameters. The final extracted model parameters
accuracy is evaluated by comparing simulations of a 31-
stage ring oscillator with measured data.
Keywords: device modeling, MOSFET, parameter
extraction, SPICE
1 INTRODUCTION

  

Source: Abebe, Henok - Department of Physics and Astronomy, California State University, Los Angeles

 

Collections: Physics