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INTERNAL ELECTROSTATIC TRANSDUCTION FOR BULK-MODE MEMS RESONATORS
 

Summary: INTERNAL ELECTROSTATIC TRANSDUCTION FOR
BULK-MODE MEMS RESONATORS
Sunil A. Bhave and Roger T. Howe
Berkeley Sensor & Actuator Center, 497 Cory Hall, University of California, Berkeley, CA 94720
ABSTRACT
This paper demonstrates a new approach to electrostatic drive and
detection of bulk acoustic resonators in which the electrode-gaps
are filled with a high dielectric constant material. Internal
electrostatic transduction has much higher efficiency than air-gap
electrostatic transduction for bulk-mode resonators, which results
in improved electrical performance. As a proof-of-concept, we
demonstrate this phenomenon by electrostatic actuation of a
1.9GHz AlN ( ~ 9) film bulk acoustic resonator (FBAR).
INTRODUCTION
Surface micromachining technology supports fabrication of multi-
frequency, electrostatically transduced lateral bulk resonators. A
single mask can include multi-frequency filters, oscillators and
mixers. However, lateral bulk acoustic resonators have very large
motional resistance due to reduced transducer area [1] and
inefficient air-gap electrostatic transduction (compared to

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering