Summary: RM03D-2
A SiGe PA with Dual Dynamic Bias Control and Memoryless
Digital Predistortion for WCDMA Handset Applications
Junxiong Deng, Prasad Gudem, Lawrence E. Larson, Don KimbaIl and Peter M. Asbeck
Center for Wireless Communications, Dept of ECE, UCSD, La Jolla, CA 92093
Abstract - This paper demonstrates a two-stage 1.95GHz
WCDMA handset RFIC power amplifier (PA) implemented
in 1.8mm2 in a 250nm SiCe BiCMOS process. With an
integrated dual dynamic bias control of the collector current
and the collector voltage in the output stage, the average
power efficiency of the two-stage PA is improved by over a
factor of two. An off-chip memoryless digital predistortion is
also adopted to improve the linearity of the power amplifier,
satisfying the 3GPP WCDMA Adjacent Channel Power Ratio
(ACPR) specifications with 26dBm average channel output
power and a peak power-added efficiency of 27%.
I n d a Terms - Silicon Germanium, power amplifiers,
WCDMA, average power efficiency, dynamic bias control,
memoryless systems.
I. INTRODUCTION

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego
Larson, Larry - Department of Electrical and Computer Engineering, University of California at San Diego

Collections: Engineering