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Submitted to Journal of Vacuum Science & Technology A June 5, 2006 On the Phase Shift of Reflection High Energy Electron Diffraction Intensity
 

Summary: Submitted to Journal of Vacuum Science & Technology A June 5, 2006
On the Phase Shift of Reflection High Energy Electron Diffraction Intensity
Oscillations during Ge(001) Homoepitaxy by Molecular Beam Epitaxy
Byungha Shin, John P. Leonard*, James W. McCamy**, and Michael J. Aziz***
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA
02138
(Version of June 5, 2006)
Abstract
We have conducted a systematic investigation of the phase shift of the Reflection
High Energy Electron Diffraction (RHEED) intensity oscillations during homoepitaxy of
Ge(001) by molecular beam epitaxy for a wide range of diffraction conditions. Our
results show that for small incidence angles with a beam azimuth several degrees away
from the <110> crystallographic symmetry direction, the phase is independent of
incidence angle; however, it starts to shift once the incidence angle is high enough that
the (004) Kikuchi line appears in the RHEED pattern. Moreover, under some conditions
we observe the oscillations from only the Kikuchi feature and not from the specular spot,
and the oscillatory behavior of the Kikuchi feature is almost out of phase with that of the
specular spot. We conclude that the phase shift is caused by the overlap of the specular
spot and the Kikuchi features, in contrast to models involving dynamical scattering
theory for the phase shift. We discuss necessary conditions for avoiding interference.

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science