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Ni Schottky diodes on cubic GaN S. Potthast, J. Fernandez, J. Schrmann, and K. Lischka
 

Summary: Ni Schottky diodes on cubic GaN
D. J. As,a
S. Potthast, J. Fernandez, J. Schörmann, and K. Lischka
Department of Physics, University of Paderborn, D-33098 Paderborn, Germany
H. Nagasawa and M. Abe
HOYA Advanced Semiconductor Technologies Co., Ltd., 1-17-16 Tanashioda, Sagamihara,
Kanagawa 229-1125, Japan
Received 16 December 2005; accepted 22 February 2006; published online 14 April 2006
Schottky diodes were fabricated by thermal evaporation of nickel on phase-pure cubic GaN
c-GaN layers grown by plasma assisted molecular beam epitaxy on freestanding 3C-SiC. Detailed
analysis of the I-V characteristics revealed the existence of a thin surface barrier at the
Ni-semiconductor interface. Thermal annealing in air at 200 °C alters the composition of this thin
surface barrier, reduces the leakage current by three orders of magnitude, and increases the
breakdown voltage. The dependence of the breakdown voltage on the doping density of the
c-GaN layers is in good agreement with calculated values. We obtain a critical electric-field strength
of Ecrit 2.5 106
V/cm for c-GaN. © 2006 American Institute of Physics.
DOI: 10.1063/1.2193401
Schottky diodes SDs are key elements for the realiza-
tion of GaN-based electronic devices such as high-power

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics