Summary: Level Set Modeling of Transient Electromigration
Grooving \Lambda
M. Khenner 1 A. Averbuch 1 M. Israeli 2 M. Nathan 3 E. Glickman 3
1 Department of Computer Science
School of Mathematical Sciences
Tel Aviv University, Tel Aviv 69978, Israel
2 Faculty of Computer Science
Technion, Haifa 32000, Israel
3 Department of Electrical Engineering­Physical Electronics
Faculty of Engineering
Tel Aviv University, Tel Aviv 69978, Israel
Abstract
A numerical investigation of grain­boundary (GB) grooving by means of the Level
Set (LS) method is carried out. GB grooving is emerging as a key element of electromi­
gration drift in polycrystalline microelectronic interconnects, as evidenced by a number
of recent studies. The purpose of the present study is to provide an efficient numer­
ical simulation, allowing a parametric study of the effect of key physical parameters
(GB and surface diffusivities, grain size, current density, etc) on the electromigra­
tion drift velocity as well as on the morphology of the affected regions. An idealized
polycrystalline interconnect which consists of grains separated by parallel GBs aligned

Source: Averbuch, Amir - School of Computer Science, Tel Aviv University

Collections: Computer Technologies and Information Sciences