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Summary: LATERALLY-EXCITED SILICON BULK ACOUSTIC RESONATORS WITH SIDEWALL ALN
R. Tabrizian and F. Ayazi
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia, USA
ABSTRACT
This paper presents lateral silicon bulk acoustic
resonators that are piezoelectrically excited using a thin
layer of AlN on their vertical sidewalls. Sputtered AlN
coats the sidewalls of a 20 um thick resonator conformally
and uniformly, enabling the excitation of
width-extensional modes in a suspended silicon
microstructure using the longitudinal piezoelectric stress
coefficient e33. A motional resistance of ~35 was
measured in air for a 100 MHz silicon resonator, showing
at least ten times smaller motional resistance compared to
its capacitive counterpart.
KEYWORDS
Lateral excitation, bulk acoustic resonator, sidewall
AlN, longitudinal piezoelectric coefficient, motional
resistance, electromechanical coupling, SiBAR
INTRODUCTION
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