Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
PHYSICAL REVIEW B 83, 155430 (2011) Landau levels and band bending in few-layer epitaxial graphene
 

Summary: PHYSICAL REVIEW B 83, 155430 (2011)
Landau levels and band bending in few-layer epitaxial graphene
Hongki Min,1,2,*
S. Adam,1
Young Jae Song,1,2
Joseph A. Stroscio,1
M. D. Stiles,1
and A. H. MacDonald3
1
Center for Nanoscale Science and Technology, National Institute of Standards and
Technology, Gaithersburg, Maryland 20899-6202, USA
2
Maryland NanoCenter, University of Maryland, College Park, Maryland 20742, USA
3
Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA
(Received 12 January 2011; revised manuscript received 28 February 2011; published 18 April 2011)
The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide
can be altered by the presence of a scanning tunneling microscope (STM) tip used to probe top-layer
electronic properties, and by a perpendicular magnetic field which induces well-defined Landau levels. Hartree
approximation calculations in the perpendicular field case show that charge tends to rearrange between the layers

  

Source: Adam, Shaffique - Condensed Matter Theory Center, University of Maryland at College Park

 

Collections: Physics