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Trans. Electr. Electron. Mater. 10(1) 21 (2009): G.-D. Hong et al. 23 Review Paper: Challenges for Nanoscale MOSFETs and Emerging
 

Summary: Trans. Electr. Electron. Mater. 10(1) 21 (2009): G.-D. Hong et al. 23
Review Paper: Challenges for Nanoscale MOSFETs and Emerging
Nanoelectronics
Yong-Bin Kim
Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115,
USA
Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main key
for continuous progress in silicon-based semiconductor industry over the past three decades.
However, as the technology scaling enters nanometer regime, CMOS devices are facing many
serious problems such as increased leakage currents, difficulty on increase of on-current, large
parameter variations, low reliability and yield, increase in manufacturing cost, and etc. To sustain
the historical improvements, various innovations in CMOS materials and device structures have
been researched and introduced. In parallel with those researches, various new nanoelectronic
devices, so called "Beyond CMOS Devices," are actively being investigated and researched to
supplement or possibly replace ultimately scaled conventional CMOS devices. While those
nanoelectronic devices offer ultra-high density system integration, they are still in a premature stage
having many critical issues such as high variations and deteriorated reliability. The practical
realization of those promising technologies requires extensive researches from device to system
architecture level. In this paper, the current researches and challenges on nanoelectronics are
reviewed and critical tasks are summarized from device level to circuit design/CAD domain to

  

Source: Ayers, Joseph - Marine Science Center & Department of Biology, Northeastern University

 

Collections: Engineering