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Single-Crystal Silicon HARPSS Capacitive Resonators with Submicron Gap-Spacing Seong Yoel No, Akinori Hashimura, Siavash Pourkamali, and Farrokh Ayazi
 

Summary: Single-Crystal Silicon HARPSS Capacitive Resonators with Submicron Gap-Spacing
Seong Yoel No, Akinori Hashimura, Siavash Pourkamali, and Farrokh Ayazi
School of Electrical and Computer Engineering
Georgia Institute of Technology, GA 30332-0250
E-mail: ayazi@ece.gatech.edu, Tel: (404) 894-9496, Fax: (404) 894-4700
ABSTRACT
This paper reports on the fabrication and characterization of
single crystal silicon (SCS) in-plane capacitive resonators with
submicron gap spacing using the HARPSS process. The
resonating element is made out of single crystal silicon and the
drive and sense electrodes are made out of trench-refilled
polysilicon, hence yielding an all-silicon microresonator with
potentially better temperature and long-term stability. The
capacitive gap is defined by a sacrificial oxide layer, which can be
potentially reduced to the ten's of nanometer range (700nm
reported in this paper). Quality factor as high as 67,000 was
measured in 1mTorr vacuum for the 40kHz fundamental resonance
frequency of a clamped-clamped beam SCS HARPSS resonator. A
510Ám long, 5.5Ám wide, 20Ám thick clamped-clamped beam
resonator was operated in its third resonance mode at 1MHz and

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering