| | |
Summary: Quantum Mechanical Effects Correction Models for
Inversion Charge and Current-Voltage (I-V) Characteristics of the MOSFET Device
H. Abebe*
and E. Cumberbatch**
Nanotech20031
*
University of Southern California, Information Sciences Institute, MOSIS Service, 4676 Admiralty Way,
Marina del Rey, California 90292, USA, abebeh@mosis.org
**
Claremont Graduate University, Department of Mathematics, Claremont, California 91711, USA,
ellis.cumberbatch@cgu.edu
1
The 2003 Nanotech Conference Proceedings, Feb 23-27, San Francisco, U.S.A.
ABSTRACT
Analytic 1-D quantum mechanical effects correction
formulae for the MOSFET inversion charge and I-V
characteristics are derived from the density gradient (DG)
model using matched asymptotic expansion techniques.
Results for the classical drift-diffusion (DD) equations
using asymptotic techniques have been achieved by Please
|
