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Cross-Section High Resolution Transmission Electron Microscopy Investigation of Internal Structures of Gallium Nitride Nanowires
 

Summary: Cross-Section High Resolution Transmission Electron Microscopy
Investigation of Internal Structures of Gallium Nitride Nanowires
Benjamin W. Jacobs1
, Kaylee McElroy2
, Raed Al-Duhaileb3
, Martin A Crimp4
, Virginia M. Ayres5
1,2,3,5
Benjamin W. Jacobs, Kaylee McElroy, Raed Al-Duhaileb,Virginia M. Ayres, Dept. of Electrical and Computer Engineering,
4
Martin A Crimp, Dept. of Chemical Engineering and Materials Science
Michigan State University, East Lansing, Michigan, USA e-mail: ayresv@msu.edu
Abstract-Gallium nitride nanowires and rods were
analyzed with plain-view and cross-section high
resolution transmission electron microscopy. Cross-
section studies revealed details of the internal structures
including totally coherent internal interfaces and
nanopipes. The internal structures have implications for
electronic and opto-electronic device performance.
I. INTRODUCTION

  

Source: Ayres, Virginia - Department of Electrical and Computer Engineering, Michigan State University

 

Collections: Materials Science; Biology and Medicine