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Epitaxial growth and optical transitions of cubic GaN films D. Schikora, M. Hankeln, D. J. As, and K. Lischka
 

Summary: Epitaxial growth and optical transitions of cubic GaN films
D. Schikora, M. Hankeln, D. J. As, and K. Lischka
Universita¨t Paderborn, FB 6-Physik, Warburgerstraße 100, D-33098 Paderborn, Germany
T. Litz and A. Waag
Universita¨t Wu¨rzburg, Physikalisches Institut, Am Hubland, D-97074 Wu¨rzburg, Germany
T. Buhrow and F. Henneberger
Humboldt-Universita¨t Berlin, Institut fu¨r Physik, Invalidenstraße 110, D-10115 Berlin, Germany
Received 6 May 1996
Single-phase cubic GaN layers are grown by plasma-assisted molecular-beam epitaxy. The temperature
dependence of the surface reconstruction is elaborated. The structural stability of the cubic growth in depen-
dence of the growth stoichiometry is studied by RHEED measurements and numerical simulations of the
experimental RHEED patterns. Growth oscillations on cubic GaN are recorded at higher substrate temperatures
and nearly stoichiometric adatom coverage. Photoluminescence reveals the dominant optical transitions of
cubic GaN and, by applying an external magnetic field, their characteristic g factors are determined.
S0163-1829 96 51936-3
Recently, it has been demonstrated that blue light-
emitting diodes and even laser diodes can be fabricated from
GaN-based heterostructures grown on sapphire 0001
substrates.1,2
The polytype group-III nitrides are naturally

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics