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Thermodynamic analysis and growth of ZrO2 by chloride chemical vapor deposition
 

Summary: Thermodynamic analysis and growth of ZrO2 by chloride
chemical vapor deposition
V.G. Varanasi a,, T.M. Besmann a
, E.A. Payzant a
, T.L. Starr b
, T.J. Anderson c
a
Materials Science and Technology Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831, USA
b
University of Louisville, Louisville, KY 40292, USA
c
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
Received 23 May 2006; received in revised form 6 November 2007; accepted 12 November 2007
Available online 19 November 2007
Abstract
Equilibrium calculations were used to optimize conditions for the chemical vapor deposition (CVD) of zirconia. The results showed zirconia
formation would occur at high oxygen to zirconium atomic ratios (N4), low hydrogen to carbon ratios (b10), low pressures (b105 Pa) and high
temperatures (N800 C). Using these calculations as a guide, single-phase monoclinic zirconia coatings were deposited onto 2-cm diameter -
alumina substrates. The maximum growth rate achieved was 2.46 mg cm-2
h-1

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science