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MRS Proceedings, 1996 ION-SPUTTER INDUCED RIPPLING OF Si(111)
 

Summary: MRS Proceedings, 1996
ION-SPUTTER INDUCED RIPPLING OF Si(111)
Jonah D. Erlebacher *, Michael J. Aziz *
*Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138,
jonah@matsci.harvard.edu
ABSTRACT
The morphology of ion sputtered Si(111) surfaces at glancing angles and elevated
temperatures was studied by AFM. Under particular ion beam and sample conditions, the
morphology of the surfaces was found to be rippled, with roughly sinusoidal-shaped bumps.
This observation is in agreement with predictions of Bradley and Harper [1], and is similar to
experiments performed by Chason et al. [2] on germanium. Observation of the temporal
evolution by stopping growth and performing microscopy suggests that a steady-state rippled
morphology develops by coalescence of oblong islands. The wavelength of the ripples can be
controlled up to about 600 nm, with amplitudes up to 60 nm. This observation creates an
opportunity to make nanostructured surfaces for the study of crystal surface dynamics.
INTRODUCTION
Ion-sputter induced rippling (SIR) of crystalline surfaces is caused by creating a competition
between anisotropic roughening due to erosion by an off-normal ion beam and surface relaxation
(annealing) due to surface diffusion. Because erosion operates at essentially all length scales,
and surface diffusion only operates over short length scales, sputtering a high temperature surface

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science