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Focused ion beam induced deflections of freestanding thin films and P. Chenb
 

Summary: Focused ion beam induced deflections of freestanding thin films
Y.-R. Kima
and P. Chenb
Department of Molecular and Cellular Biology, Harvard University, 7 Divinity Avenue,
Cambridge, Massachusetts 02138
M. J. Aziz
Division of Engineering and Applied Sciences, Harvard University, 29 Oxford Street,
Cambridge, Massachusetts 02138
D. Branton
Department of Molecular and Cellular Biology, Harvard University, 7 Divinity Avenue,
Cambridge, Massachusetts 02138
J. J. Vlassakc
Division of Engineering and Applied Sciences, Harvard University, 29 Oxford Street,
Cambridge, Massachusetts 02138
Received 3 February 2006; accepted 16 August 2006; published online 30 November 2006
Prominent deflections are shown to occur in freestanding silicon nitride thin membranes when
exposed to a 50 keV gallium focused ion beam for ion doses between 1014
and 1017
ions/cm2
.

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University
Branton, Daniel - Department of Molecular and Cellular Biology, Harvard University
Kim, Young-Rok - Department of Food Science and Biotechnology, Kyung Hee University

 

Collections: Biology and Medicine; Biotechnology; Engineering; Materials Science; Physics