Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Self-diffusivity of liquid silicon measured by pulsed laser melting P. G. Sanders and M. J. Aziza)
 

Summary: Self-diffusivity of liquid silicon measured by pulsed laser melting
P. G. Sanders and M. J. Aziza)
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
Received 14 May 1999; accepted for publication 7 July 1999
The silicon liquid self-diffusivity was determined by pulsed laser melting of 30
Si ion implanted
silicon-on-insulator thin films. Secondary ion mass spectrometry was employed to measure the 30
Si
concentration-depth profile before and after melting and solidification. Melt depth versus time and
total melt duration were monitored by time-resolved lateral electrical conductance and optical
reflectance measurements. One-dimensional diffusion simulations were utilized to match the final
30
Si experimental concentration spatial profile given the initial concentration profile and the
temporal melt-depth profile. The silicon liquid self-diffusivity at the melting point is (4.0 0.5)
10 4
cm2
/s. Calculations of buoyancy and Marangoni convection indicate that convective
contamination is unlikely. 1999 American Institute of Physics. S0021-8979 99 02920-5
INTRODUCTION
Atomic transport properties of liquid silicon are impor-

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science