Summary: © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
p s scurrent topics in solid state physics
c
status
solidi
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physica
Phys. Status Solidi C 7, No. 7­8, 1988­1990 (2010) / DOI 10.1002/pssc.200983600
Electronic properties of nonpolar
cubic GaN MOS structures
D. J. As*
, H. Pöttgen, E. Tschumak, and K. Lischka
University of Paderborn, Department of Physics, Warburger Straße 100, 33098 Paderborn, Germany
Received 7 October 2009, accepted 8 January 2010
Published online 26 May 2010
Keywords GaN, MBE, metal-oxide-semiconductor junctions, electrical properties
* Corresponding author: e-mail d.as@uni-paderborn.de, Phone: +49 5251 60 5838, Fax: +49 5251 60 5843
The electric characteristics of non-polar cubic gallium ni-
tride (GaN) metal-oxide-semiconductor (MOS) capaci-
tors were measured by capacitance (C-V) and conduc-

Source: As, Donat Josef - Department Physik, Universität Paderborn

Collections: Materials Science; Physics