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JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 18, NO. 6, DECEMBER 2009 1335 Monolithic Integration of Silicon Nanowires
 

Summary: JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 18, NO. 6, DECEMBER 2009 1335
Monolithic Integration of Silicon Nanowires
With a Microgripper
Ozgur Ozsun, B. Erdem Alaca, Member, IEEE, Member, ASME, Yusuf Leblebici, Senior Member, IEEE,
Arda D. Yalcinkaya, Member, IEEE, Izzet Yildiz, Mehmet Yilmaz, and Michalis Zervas
Abstract--Si nanowire (NW) stacks are fabricated by utilizing
the scalloping effect of inductively coupled plasma deep reactive
ion etching. When two etch windows are brought close enough,
scallops from both sides will ideally meet along the dividing cen-
terline of the windows turning the separating material column into
an array of vertically stacked strings. Upon further thinning of
these NW precursors by oxidation followed by oxide etching, Si
NWs with diameters ranging from 50 nm to above 100 nm are
obtained. The pattern of NWs is determined solely by photolitho-
graphy. Various geometries ranging from T-junctions to circular
coils are demonstrated in addition to straight NWs along specific
crystallographic orientations. The number of NWs in a stack is
determined by the number of etch cycles utilized. Due to the
precise lithographic definition of NW location and orientation,
the technique provides a convenient batch-compatible tool for

  

Source: Alaca, B. Erdem - Department of Mechanical Engineering, Koc University

 

Collections: Engineering