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Quantum mechanical (QM) effects are playing a significant role in MOSFET (metal-oxide-silicon field-effect transistor) device
 

Summary: ABSTRACT
Quantum mechanical (QM) effects are playing a significant role in
MOSFET (metal-oxide-silicon field-effect transistor) device
channel surface potential characteristics due to the ever shrinking
feature size such as thin gate dielectric (below 4nm). An increase
of the channel surface potential from the classical result due to the
QM effects at strong inversion is reported in the simulation results
of [1, 2]. In a recent paper, [3], we derived the QM correction
analytical models for the device inversion charge and current-
voltage (I-V) characteristics. These models are suitable for
applications in SPICE (simulation program with integrated circuit
emphasis) simulator. The correction formulae are derived from the
density-gradient (DG) model, [4-6], using asymptotic methods [7-
10]. However due to insufficient information in the DG model
concerning boundary conditions, in [3] we used the asymptotic
outer charge density surface potential parameter, qsw , as a fitting
parameter in comparing our final analytical I-V model with the
numerical data. In this paper we extend the work of [3] and derive
a compact analytical surface potential model with QM effects for a
device operating at strong inversion. This new model gives

  

Source: Abebe, Henok - Department of Physics and Astronomy, California State University, Los Angeles

 

Collections: Physics