Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Effectsof Device Design on the Thermal Properties of InP-basedHBTs
 

Summary: 138
Effectsof Device Design on the Thermal Properties of
InP-basedHBTs
J C Li and P M Asbeck
University of California, San Diego, CA, USA
T Hussain, D Hitko, C Fields, and M Sokolich
HRL Laboratories, LLC, Malibu, CA, USA
Abstract. Thermal management is of critical concern in high performance
InP-based HBTs, because enhancements in RF performance are typically
obtained with increased current density and aggressive device scaling.
The resulting increase in junction temperature can degrade carrier
transport and negatively affect overall device reliability. This paper
reports an investigation of thermal resistance in InP-based HBTs with
various vertical and lateral designs. Three-dimensional simulations and
experimental results illustrate that significant differences in thermal
resistance can arise with relatively small changes in device structure.
1. Introduction
Device designers have focused their efforts on two primary methods of improving the RF
performance of InP-based HBTs: ( I ) delaying the onset of Kirk effect and (2) reducing
parasitic resistances and capacitances. The onset of Kirk effect can be tailored to the

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering