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Summary: HIGH FREQUENCY MICROMECHANICAL PIEZO-ON-SILICON BLOCK RESONATORS
Shweta Humad, Reza Abdolvand, Gavin K. Ho, Gianluca Piazza and Farrokh Ayazi
School of Electrical and Computer Engineering
Georgia Institute of Technology
Atlanta, Georgia 30332-0250 USA
shweta@ece.gatech.edu; ayazi@ece.gatech.edu; Tel: (404) 894-9496; Fax: (404) 894-4700
ABSTRACT
This paper reports on the design, implementation and
characterization of high-frequency single crystal silicon
(SCS) block resonators with piezoelectric electromechanical
transducers. The resonators are fabricated on 4µm thick SOI
substrates and use sputtered ZnO as the piezo material. The
centrally-supported blocks can operate in their first and
higher order length extensional bulk modes with high quality
factor (Q). The highest measured frequency is currently at
210MHz with a Q of 4100 under vacuum, and the highest Q
measured is 11,600 at 17MHz. The uncompensated
temperature coefficient of frequency (TCF) was measured to
be 40ppm/°C and linear over the temperature range of 20-
100o
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