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Summary: Impact ionization coefficients in (100) GaInP
S.-L. Fu, T. P. Chin, M. C. Ho, C. W. Tu, and P. M. Asbeck
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla,
California 92093
Received 7 November 1994; accepted for publication 4 April 1995
Electron and hole impact ionization coefficients in 100 Ga0.5In0.5P have been measured by
photomultiplication measurements. The ratio of hole to electron ionization coefficients, / , is
shown to decrease from 2 to 1 when the electric field is increased from 3.5 105
to 6.5 105
V/cm. As confirmation, breakdown voltages were measured for several p n n diodes with
various concentrations in the n region. The values observed showed good agreement with those
calculated from the ionization coefficients. Typical breakdown voltages are on the order of 1.6 times
higher than those expected for GaAs. © 1995 American Institute of Physics.
Ga0.5In0.5P, a wide bandgap semiconductor lattice
matched to GaAs, is of interest for a variety of device appli-
cations such as heterojunction bipolar transistors HBTs and
heterojunction field-effect transistors HFETs . The advan-
tages of GaInP over GaAlAs for GaAs-based HBT applica-
tions include its large energy bandgap 1.9 eV , lower con-
duction band offset, reduced deep-level concentration, and
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