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Impact ionization coefficients in (100) GaInP S.-L. Fu, T. P. Chin, M. C. Ho, C. W. Tu, and P. M. Asbeck
 

Summary: Impact ionization coefficients in (100) GaInP
S.-L. Fu, T. P. Chin, M. C. Ho, C. W. Tu, and P. M. Asbeck
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla,
California 92093
Received 7 November 1994; accepted for publication 4 April 1995
Electron and hole impact ionization coefficients in 100 Ga0.5In0.5P have been measured by
photomultiplication measurements. The ratio of hole to electron ionization coefficients, / , is
shown to decrease from 2 to 1 when the electric field is increased from 3.5 105
to 6.5 105
V/cm. As confirmation, breakdown voltages were measured for several p n n diodes with
various concentrations in the n region. The values observed showed good agreement with those
calculated from the ionization coefficients. Typical breakdown voltages are on the order of 1.6 times
higher than those expected for GaAs. 1995 American Institute of Physics.
Ga0.5In0.5P, a wide bandgap semiconductor lattice
matched to GaAs, is of interest for a variety of device appli-
cations such as heterojunction bipolar transistors HBTs and
heterojunction field-effect transistors HFETs . The advan-
tages of GaInP over GaAlAs for GaAs-based HBT applica-
tions include its large energy bandgap 1.9 eV , lower con-
duction band offset, reduced deep-level concentration, and

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering