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Growth of cubic GaN on nano-patterned 3C-SiC/Si (0 0 1) substrates R.M. Kemper n
 

Summary: Growth of cubic GaN on nano-patterned 3C-SiC/Si (0 0 1) substrates
R.M. Kemper n
, M. Weinl, C. Mietze, M. H¨aberlen, T. Schupp, E. Tschumak, J.K.N. Lindner, K. Lischka, D.J. As
University of Paderborn, Department of Physics, Warburger Strasse 100, 33098 Paderborn, Germany
a r t i c l e i n f o
Available online 21 December 2010
Keywords:
A1. Crystal structure
A1. Defects
A1. Growth models
A1. Nanostructures
A3. Molecular beam epitaxy
B1. Nitrides
a b s t r a c t
Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si
(0 0 1) substrates with negligible hexagonal content and less defect density than in planar cubic GaN
layers. Nano-patterning of 3C-SiC/Si (0 0 1) is achieved by self-ordered colloidal masks for the first time.
The method presented here offers the possibility to create nano-patterned cubic GaN without the need for
a GaN etching process and thus is a potential alternative to the conventional top­down fabrication
techniques.

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics