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Response of Si and InSb to ultrafast laser pulses Traian Dumitrica1; 2

Summary: Response of Si and InSb to ultrafast laser pulses
Traian Dumitrica1; 2
, Andrea Burzo1
, Yusheng Dou1; 3
, and Roland E. Allen*; 1
Department of Physics and Institute for Quantum Studies, Texas A&M University, College Station,
TX 77843, USA
Department of Mechanical Engineering and Materials Science, and Center for Nanoscale Science
and Technology, Rice University, Houston, TX 77251, USA
Department of Chemistry and Center for Ultrafast Laser Applications, Princeton University,
Princeton, NJ 08544, USA
Received 1 March 2004, revised 1 May 2004, accepted 31 May 2004
Published online 19 July 2004
PACS 78.20.Bh, 78.47.+p
We present simulations of the response of Si and InSb to femtosecond-scale laser pulses of various
intensities. In agreement with the experiments by various groups on various materials, there is a non-
thermal phase transition for each of these semiconductors above a threshold intensity. Our simulations


Source: Allen, Roland E. - Department of Physics and Astronomy, Texas A&M University


Collections: Physics