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Response of Si and InSb to ultrafast laser pulses Traian Dumitrica1; 2
 

Summary: Response of Si and InSb to ultrafast laser pulses
Traian Dumitrica1; 2
, Andrea Burzo1
, Yusheng Dou1; 3
, and Roland E. Allen*; 1
1
Department of Physics and Institute for Quantum Studies, Texas A&M University, College Station,
TX 77843, USA
2
Department of Mechanical Engineering and Materials Science, and Center for Nanoscale Science
and Technology, Rice University, Houston, TX 77251, USA
3
Department of Chemistry and Center for Ultrafast Laser Applications, Princeton University,
Princeton, NJ 08544, USA
Received 1 March 2004, revised 1 May 2004, accepted 31 May 2004
Published online 19 July 2004
PACS 78.20.Bh, 78.47.+p
We present simulations of the response of Si and InSb to femtosecond-scale laser pulses of various
intensities. In agreement with the experiments by various groups on various materials, there is a non-
thermal phase transition for each of these semiconductors above a threshold intensity. Our simulations

  

Source: Allen, Roland E. - Department of Physics and Astronomy, Texas A&M University

 

Collections: Physics